Mohamed El Bouanani

Previous Scheduled Teaching

Published Intellectual Contributions

Conference Proceeding

• Mo, Y., Ecton, P., Ballinger, A., Mahajan, H., Chang, A., Garrett, D., Lynch, M., Perez, J., Ukirde, V., El Bouanani, M. (2006). Diffusion of Silver in DC plasma prepared Diamond Like Carbon Films. APS Meeting Abstracts.

Journal Article

• El Bouanani, M. Efficient and Stable Phosphorescent OLEDs with Negligible Efficiency Roll-off Employing A Platinum(II) Complex.
• El Bouanani, M. Reversible Changes in Luminescence Color of Pt(II) Complexes by Exposure to Multi-Stimuli Responses.
• El Bouanani, M. A Horizontally-Self-Oriented Pt(II)-Azolate Heteroleptic Fast Phosphor/Electron-Transporter for OLEDs with 32% EQE and 120 lm/W. Advanced Materials.
• Li, S., Bodenstedt, K., Kharma, M., Burson, C.M., Alhmoud, D., Moulder, C.A., Farvid, S., Ghimire, M.M., Rawashdeh, A.M., El Bouanani, M., others. (2022). Can A Double-Doped Device Modification of A Standard Bilayer OLED Improve the Photo-And/or Electro-luminescence Efficiency? A Case Study of Architecture Design in Fluorescent Devices with A Potential Roadmap for High-Efficiency Phosphorescent Devices. Comments on Inorganic Chemistry. 42 (3) 145--173. Taylor & Francis.
• El Bouanani, M., Li, S. High-Efficiency Fluorescent Organic Light-Emitting Diodes Having a Double-Doped Emissive Structure for Reduced Efficiency Roll-Off and Increased PL & EL Quantum Yields. ACS Applied Materials & Interfaces.
• El Bouanani, M., Perez, J., Philipose, U., Neogi, A., , Rout, B. (2020). Rapid ambient degradation of monolayer MoS2 after heating in air. 2D Materials.
• El Bouanani, M. (2018). Effects of Argon Sputtering and UV-Ozone Radiation on the Physico- Chemical Surface Properties of ITO.
• 2. P. R. Poudel, P.P. Poudel, B. Rout, M. El Bouanani, F.D. McDaniel. (2012). An XPS study to investigate the dependence of carbon ion fluences in the formation of buried SiC.
• 1. P. R. Poudel, P.P. Poudel, Sharma, B.P., Hwang, J.Y., B. Rout, M. El Bouanani, F.D. McDaniel. (2012). Synthesis of buried layers of β-SiC in Si by multiple energy carbon ion implantations and post thermal annealing.
• 3. Sonia Samuel , Soumya Nag, Seifollah Nasrazadani, Vaishali Ukirde, Mohamed El Bouanani, Arunesh Mohandas , Kytai Nguyen , Rajarshi Banerjee. (2010). Corrosion resistance and in vitro response of laser-deposited Ti-Nb-Zr-Ta alloys for orthopedic implant applications.
• 4. H.N. Alshareef, C. Huffman, H.C. Wen, M. Quevedo-Lopez, B.E. Gnade and M. El-Bouanani. (2008). Impact of Carbon Incorporation on the Effective Work Function of Metal Nitride Gate Electrodes.
• 5. D.A. Mazon-Montijo, M. Sotelo-Lerma, M. Quevedo-Lopez, M. El-Bouanani, H.N. Alshareef, F.J. Espinoza-Beltran, R. Ramirez-Bon. (2007). Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process.
• 7. P. Pelicon, M. El Bouanani, G.V. Ravi Prasad , A. Razpet, B. N. Guo, D. Birt, J. L. Duggan and F. D. McDaniel. (2006). Depth of origin of desorbed boron In heavy ion irradiation of ultra-shallow boron implanted Si.
• 6. M. El Bouanani, P. Pelicon, A. Razpet, I. Čadež, M. Budnar, J. Simčič. Simple and accurate IBA dose normalization using a transmission mesh-based charge integration.
• 8. M. M. Hussain, M. A. Quevedo-Lopez, H. N. Alshareef, H.C. Wen, D. Larison, B. Gnade and M. El-Bouanani. (2006). Thermal annealing effects on a representative high-k/metal film stack.
• 10. T. N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M. J. Kim, C. T. Wu, K. H. Chen, and L. C. Chen. (2005). A 5 nm Ruthenium Thin Film as a Directly Plate-able Copper Diffusion Barrier.
• H.N. Alshareef, H.C. Wen, H.R. Harris, K. Choi, H.F. Luan, P. Lysaght, P. Majhi, B.H. Lee, M. El-Bouanani,. (2005). Modulation of the work function of silicon gate electrode using thin TaN interlayers.
• 11. Praveen Nalla, Shih-Huang Huang, Yibin Zhang, Oliver Chyan, Michael G. Richmond, and Mohamed El Bouanani. (2005). Photochemically Induced Metallization of Surface Silicon Using Dinuclear Metal Carbonyl Compounds. Anchoring of Ruthenium to a Si(111) Surface through Covalent Ru-Si Bond Formation.
• 12. S. Addepalli, P. Sivasubramani, M. El-Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace. (2004). Deposition of Hf-silicate gate dielectric on SixGe1-x(100): detection of interfacial layer growth.
• 13. P. Punchaipetch, G. Pant, M. Quevedo-Lopez, C. Yao, M. El-Bouanani, M. J. Kim, R. M. Wallace, and B. E. Gnade. (2004). Low temperature deposition of hafnium silicate gate dielectrics.
• 15. M.A. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, L.J. Chambers and L. Colombo. (2003). Effect of N incorporation on boron penetration from p+ polycrystalline Si through HfSixOy films.

Manuscript

• El Bouanani, M., Che, H. Enhanced workfunction of ITO via nanoscale Se coverage: an In-situ UHV XPS and UPS study. Applied Surface Science.
• El Bouanani, M., Hui, C. X-ray radiation sensitivity in X-Ray Photoelectron Spectroscopy of ultra-thin Se on ITO. Radiation Effects & Defects in Solids.